The diffusion of donor elements in fine-grained and coarse-grained polycrystalline material was studied at temperatures ranging from 900 to 1150C (table 205). Tracers (125Sb) were used to determine the concentration/depth profiles via sectioning. By means of autoradiography, the lateral distribution of the radiotracers over the sample surface was revealed.

F.H.M.Spit, H.Bakker: Physica Status Solidi A, 1986, 97[1], 135-42

 

Table 205

Diffusivity of Sb in Si

 

T (C)

D (cm2/s)

1150

2.3 x 10-13

1100

7.9 x 10-14

1050

2.1 x 10-14