The depth-dependent nitridation-enhanced diffusion of Sb was investigated by the annealing (810 to 910C, 0.25 to 2h) of (100) doping superlattice structures in NH3. These multi-layered doping superlattices consisted of six 10nm-wide Sb doping spikes that were spaced 100nm apart. The nitridation-enhanced diffusion of Sb, which was attributed to vacancy injection, indicated vacancy supersaturation values of 3 to 5. On the basis of the spatial decay of Sb nitridation-enhanced diffusion, lower bounds on vacancy diffusivities were deduced. They were equal to 7.9 x 10-14, 1.2 x 10-12 and 2.1 x 10-11cm2/s at 810, 860 and 910C, respectively. Evidence was found for a trap-limited vacancy diffusivity.

T.K.Mogi, M.O.Thompson, H.J.Gossmann, J.M.Poate, H.S.Luftman: Applied Physics Letters, 1996, 69[9], 1273-5

Table 208

Diffusivity of Sb in Si