Bounds were obtained on the fractional contributions of self-interstitials, vacancies and concerted exchange mechanisms to diffusion at temperatures of 1100 and 1000C (tables 213 and 214). The bounds were found by simultaneously solving a system of equations while making only very conservative assumptions. The self-diffusion results yielded evidence of a dual vacancy-interstitial mechanism plus a possible concerted exchange component.

A.Ural, P.B.Griffin, J.D.Plummer: Journal of Applied Physics, 1999, 85[9], 6440-6. See also: Applied Physics Letters, 1998, 73[12], 1706-8

Table 214

Diffusivity Enhancement or Retardation for 30Si in Si