The diffusion profiles were determined at temperatures of between 950 and 1200C by using etching techniques and deep-level transient spectroscopy. The experimental conditions were particularly chosen so as to avoid O and N contamination. The resultant diffusion coefficients ranged from 5 x 10-10 to 10-8cm2/s (table 221). These values were some two orders of magnitude greater than those which had previously been reported. The associated activation energy was 1.79eV.

S.Hocine, D.Mathiot: Applied Physics Letters, 1988, 53[14], 1269-71

Table 220

Diffusivity of Sn in Si at 1000C in Various Ambients

and with Various Sb and/or Sn Distribution in the Sample