Monocrystalline wafer samples were annealed at temperatures ranging from 1070 to 1300C, and the resultant diffusion profiles were determined by using a 4-point sheet conductivity technique. It was found that the results (table 223) could be described by the expression:

D(cm2/s) = 15 exp[-3.75(eV)/kT]

R.Sellmann, J.Mimkes: Physica Status Solidi A, 1989, 112[1], K5-7