Monocrystalline samples were diffused with 48V (half-life = 16.1d) and annealed (1100 to 1250C, 5 to 25h). The results demonstrated that the diffusivity of V increased from 3.4 x 10-11 at 1100C to 4.4 x 10-10cm2/s at 1250C. Overall, the diffusivity obeyed the expression:

D(cm2/s) = 0.61 exp[-2.8(eV)/kT]

G.K.Azimov, S.Z.Zainabidinov, J.I.Kozlov: Fizika i Tekhnika Poluprovodnikov, 1989, 23[10], 1890-1 (Soviet Physics - Semiconductors, 1989, 23[10], 1169-70)

 

Table 223

Diffusivity of Tl in Si

 

Temperature (C)

D (cm2/s)

1067

6.5 x 10-14

1087

1.8 x 10-13

1110

4.8 x 10-13

1132

8.0 x 10-13

1160

1.2 x 10-12

1182

1.8 x 10-12

1202

2.1 x 10-12

1220

2.4 x 10-12

1237

5.7 x 10-12

1252

8.6 x 10-12

1275

5.7 x 10-12

1277

7.4 x 10-12

1300

2.0 x 10-11