By comparing theoretical predictions with experimental results, it was found that the free enthalpy of formation of anti-Frenkel defects was given by:

Q (eV) = 1.81eV - 7.85kT

and that the mobilities of F- ion vacancies and interstitials were given by:

μ (cm2K/Vs) = (240/T)exp[-0.59(eV)/kT]

μ (cm2K/Vs) = (4080/T)exp[-0.79(eV)/kT]

respectively. More than 5.7% of the F- ions were disordered at the melting point.

W.Bollmann: Crystal Research and Technology, 1981, 16[9], 1039-50