By using electrical resistance measurements, the electrotransport and diffusion of H in Ta was studied (table 233). It was found that the H diffusion coefficient increased with increasing sample purity. It was suggested that impurities affected the H mobility via the electronic properties.

B.A.Merisov, G.J.Khadzhai, V.I.Khotkevich: Fizika Metallov i Metallovedenie, 1978, 45[2], 440-2

 

Table 233

Diffusivity, Mobility and Effective Charge of H in Ta

 

Temperature (C)

m (cm2/Vs)

D (cm2/s)

Z*(e)

26

2.0 x 10-5

1.73 x 10-6

0.3

50

4.6 x 10-5

2.5 x 10-6

0.5

100

7.9 x 10-5

4.2 x 10-6

0.6

150

1.09 x 10-4

6.8 x 10-6

0.6

250

2.6 x 10-4

1.5 x 10-5

0.8

600

1.25 x 10-3

6.1 x 10-5

1.5