Activation energies for the motion of interstitial F- ions in pure and doped samples were deduced from the temperature dependence of the ionic conductivity. The results showed that the incorporation of Ho3+ ions into the CaF2 lattice increased the electrical conductivity. This was explained in terms of the formation of additional interstitial F- ions which compensated the excess positive charge of the Ho3+ ions. The additional conductivity of the impure crystals was determined by the interstitial F- ions. The closeness of the activation energies (table 183) suggested that there was a complete dissociation of the rare-earth ion plus interstitial F- ion complex.
V.V.Popov: Fizika Tverdogo Tela, 1969, 11[7], 1982-4
Table 183
Activation Energy for the Migration of F in Doped CaF2 at 700 to 1100K
Dopant | Content (%) | Q (eV) |
HoF3 | 0.3 | 0.99 |
NdF3 | 0.1 | 1.09 |
DyF3 | 0.3 | 1.02 |
TmF3 | 0.3 | 1.0 |