The diffusion of implanted Sn in the phase was studied, at temperatures of between 873 and 1073K (table 248), by using a Rutherford back-scattering spectrometry technique. The results for samples with a lower impurity content showed that the diffusion coefficients obeyed an Arrhenius expression of the form:

D (m2/s) = 0.004 exp[-3.5(eV)/kT]

The results for samples with a higher Fe content indicated that the diffusion mechanism was affected by the impurity concentration.

R.A.Pérez, M.Behar, F.Dyment: Philosophical Magazine A, 1997, 75[4], 993-1004

 

Table 247

Impurity Diffusion Coefficients for Si in -Ti

 

Temperature (K)

D (m2/s)

1823

2.84 x 10-11

1773

1.97 x 10-11

1723

1.47 x 10-11

1673

1.07 x 10-11

1623

7.29 x 10-12

1573

4.94 x 10-12

1523

3.34 x 10-12

1473

2.22 x 10-12

1423

1.44 x 10-12

1373

9.29 x 10-13

1323

5.60 x 10-13

1273

3.44 x 10-13

1223

2.18 x 10-13

1173

1.24 x 10-13