The intrinsic diffusivity of Al was investigated at 850 to 1290C (figure 1). The fractional diffusivity via self-interstitials was determined by combining nitridation and oxidation experiments. The diffusion behavior of Al, under extrinsic conditions, was investigated in high-concentration B- and P-doped Si.

Determination of Aluminum Diffusion Parameters in Silicon. O.Krause, H.Ryssel, P.Pichler: Journal of Applied Physics, 2002, 91[9], 5645-9

Figure 1

Diffusivity of Al in Si