The redistribution of low doses (5 x 1013/cm2) of implanted 3MeV Al in inert and dry O2 ambients was investigated at 900 to 1100C. The profiles were measured by using secondary ion mass spectroscopy, and the effective diffusivities were deduced (figure 2) by fitting the experimental data using calculated profiles. It was found that Al diffusion was significantly enhanced during oxidation. This enhancement decreased with temperature. A comparison with data on B suggested that the of Al diffusion mechanism was similar to that of B.

Diffusion of Low-Dose Implanted Aluminum in Silicon in Inert and Dry O2 Ambient C.Ortiz, D.Mathiot, C.Dubois, R.Jérisian: Journal of Applied Physics, 2000, 87[5], 2661-3