The transient enhanced diffusion of high-concentration As during post-implantation annealing was simulated. This was based upon models for As diffusion, for transient enhanced diffusion by self-interstitial clusters and for end-of-range defects. Account was taken of As complex formation and As precipitation; which caused As deactivation. A satisfactory fit to As depth profiles at high doses (1015 to 5 x 1015/cm2) was found for a wide range of annealing conditions (750 to 1000C). The As complex formation played an important role in determining the diffusion profiles via self-interstitial emission during formation at lower temperatures, and via As deactivation at higher temperatures. The simulation results suggested that B segregation towards the As tail-regions was associated with self-interstitial distributions that were determined by end-of-range defects and As profiles.

Transient Enhanced Diffusion and Deactivation of High-Dose Implanted Arsenic in Silicon. M.Uematsu: Japanese Journal of Applied Physics - 1, 2000, 39[3A], 1006-12