The effects of point defects and extended defects, introduced by ion implantation, upon the transient enhanced diffusion of As were studied. The implantation of a sub-amorphizing dose of Si into Si wafers, with a nearly uniform As background doping, resulted in a slight segregation of As into {311} defects after annealing at 670C. An amorphizing dose of Si was found to cause significant As segregation into end-of-range dislocation loops after annealing at 820C, regardless of the background As concentration. The As ions were also implanted into Si wafers, at 30keV, to give low and medium doses. Some of the wafers were pre-annealed in order to recrystallize the amorphous layer, and were subsequently implanted with sub-amorphizing doses of 50keV Si ions. The resultant profiles revealed that the transient enhanced diffusion of As increased with Si implantation dose; thus indicating that transient As diffusion occurred via Si self-interstitials, as in the case of B and P. Suppression of As transient enhanced diffusion in the early stages of annealing, for higher As and Si implantation doses, was also observed. This was considered to arise from the formation of immobile As-vacancy clusters.

Influences of Point and Extended Defects on As Diffusion in Si. R.Kim, T.Hirose, T.Shano, H.Tsuji, K.Taniguchi: Japanese Journal of Applied Physics - 1, 2002, 41[1], 227-31