The low-temperature (500 to 800C) diffusion of As from a heavily-doped Si layer was simulated on the basis of a dual pair mechanism. The anomalously high diffusion rate was attributed to excess self-interstitials which accumulated in the layer during the preceding high-temperature diffusion stage. A shift in the concentration profile in the region of intermediate concentration values was caused by the presence of a maximum in the concentration dependence of the diffusivity. This shift was attributed to the considerable role played by negatively charged self-interstitials in the As diffusion process.

Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer. O.V.Aleksandrov: Semiconductors, 2002, 36[4], 370-4