The As diffusion profiles in bulk Si and thin Si-on-insulator wafers were measured by using secondary ion mass spectroscopy and were also simulated. No difference was observed between the diffusion profiles in bulk Si and those in the Si-on-insulator wafers, which was in contrast to the B and P diffusion which were retarded in Si-on-insulator wafers. This was because point-defect supersaturation was not significant, as a result of the much smaller diffusion coefficients of As as compared to those of B and P.

As and Sb Diffusion Profiles in Thin Silicon-on-Insulator Wafers. Y.Shibata, T.Ichino, M.Ichimura, E.Arai: Japanese Journal of Applied Physics - 1, 2003, 42[7A], 4282-3