Experimental concentration profiles of As ions in a Si substrate at 20, 600 and 1050C and ion current of 40µA/cm2, as well as at 1050C and 10µA/cm2, were presented. On the basis of these and previously published experimental data, the process of radiation-stimulated ionic diffusion and self-diffusion in Si was simulated. A number of interesting dependences, which were discussed in the conclusion of this study, were obtained.

Diffusion of As Ions and Self-Diffusion in Silicon during Implantation. K.D.Demakov, V.A.Starostin, S.G.Shemardov: Technical Physics, 2002, 47[10], 1333-6