The transient enhanced diffusion of As in samples implanted at 35keV to a dose of 5 x 1015/cm2 was investigated at 750 to 1030C by comparing experimental and simulated profiles. At above 900C, the phenomenon was of moderate degree and vanished after a few seconds. At lower temperatures, diffusivity enhancements of some orders of magnitude were observed. The anomalous shift of the junction depth, evaluated at 2 x 1018/cm3, was about 12nm at 900C and increased up to 45nm at 750C. It was shown that the contributions that generated the interstitial excess that was responsible for the transient enhanced diffusion were the implantation damage, and the aggregation of As atoms into clusters. By means of an experiment that separated the 2 contributions, it was estimated that about one third of the transient enhanced diffusion observed in the first 1200s of annealing at 800C was due to the defects produced by clustering.

Transient Enhanced Diffusion of Arsenic in Silicon. S.Solmi, M.Ferri, M.Bersani, D.Giubertoni, V.Soncini: Journal of Applied Physics, 2003, 94[8], 4950-5