The diffusion of As was studied at 1000C in Si. Using selective point defect injection, obtained by surface reactions during using rapid thermal annealing in an O atmosphere, clear evidence of the participation of both vacancy and interstitial defects in the diffusion of As in Si was obtained.

Evidence for a Vacancy and Interstitial Mediated Diffusion of As in Si and Si0.9Ge0.1. S.Uppal, A.F.W.Willoughby, J.M.Bonar, J.Zhang: Applied Physics Letters, 2004, 85[4], 552-4