Experiments were carried out on the diffusion of As from a radio-frequency plasma and into a porous-Si film intended to serve as a source for the next diffusion step. The film was made by plasma etching or electrolytic anodization. The goal was to reduce the wafer temperature, and it was shown that much lower temperatures were possible using this diffusion technique. It was established that the doping concentration was more uniform over the wafer surface if the pores were arranged regularly; as with the porous Si produced by plasma etching. It was also established that plasma-assisted diffusion was affected mainly by the dispersion of pores with regard to size, total pressure, partial pressure of the doping agent (AsH3), radio-frequency power and wafer temperature.

Plasma-Assisted Diffusion Doping of Porous-Silicon Films. A.A.Kovalevskii, V.V.Glukhmanchuk, M.V.Tarasikov, V.M.Sorokin: Russian Microelectronics, 2004, 33[1], 13-7