An analytical solution was presented for dissociative and kick-out diffusion in a 1-dimensional region which was bounded by 2 parallel surfaces. The rapid recovery of equilibrium conditions for vacancies and interstitial matrix atoms was assumed. This assumption made the diffusion equation linear. Calculated results were presented for Au diffusion into a Si plate which contained a high dislocation density. The assumption of rapid recovery could be verified by using the present solution.

An Analytical Solution of the Dissociative and Kick-Out Diffusion Mechanisms. T.Kasuya, M.Fuji: Journal of Applied Physics, 2000, 88[1], 594-6