The diffusion of Au in Czochralski-grown material, with and without N, was studied. It was found that the Au concentration after diffusion at 700, 750 and 800C in N-doped Si was always less than that in Si without N. A decrease in Au concentration in N-doped crystals was explained by assuming that N stimulated O precipitation.

Study of Nitrogen-Related Defects by Means of Gold and Hydrogen Diffusion Investigations. A.L.Parakhonsky, E.B.Yakimov, D.Yang: Microelectronic Engineering, 2003, 66[1-4], 379-84