Precise in-diffusion and out-diffusion profiles of substitutional Au in Si were investigated by using a numerical method for non-linear diffusion equation as affected by self-interstitials and vacancies simultaneously. In contrast to the usual approximate solutions, a small contribution of self-interstitials to the in-diffusion resulted in profile for a kick-out mechanism. A small contribution of vacancies to out-diffusion resulted in the profiles fora dissociative mechanism. Therefore, both experimental profiles of in-diffusion and out-diffusion were required in order to determine the contribution rate of these point defects. The experimental results indicated that the contribution rate of vacancies to the effective diffusion of Au was about 90% at 900C. This was very different to previous results.

In-Diffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies. M.Morooka, T.Kajiwara: Japanese Journal of Applied Physics - 1, 2003, 42[6A], 3311-5