It was shown that B exhibited suppressed diffusion in Si with C atom concentrations of about 1020/cm3. Since B diffused via an interstitial mechanism, this indicated a suppressed density of self-interstitials and an enhanced density of vacancies in C-doped Si.

Non-Equilibrium Point Defects and Dopant Diffusion in Carbon-Rich Silicon. H.Rücker, B.Heinemann, R.Kurps: Physical Review B, 2001, 64[7], 073202 (4pp)