A theoretical model was proposed for describing the accelerated diffusion of B during high-temperature implantation. The model took account of the production and diffusion of impurities and point defects, and of the formation and decomposition of defect-impurity pairs. The formation of dislocations, and an increase or decrease in their size during bombardment was also taken into account. The dislocations were sinks for defects and impurities. The computed profiles were compared with existing data It was shown that dislocations played an important role as trapping centers. An oscillatory behavior of the impurity profile was observed near to the surface, and was attributed to simultaneous impurity implantation and diffusion.

Diffusion of Boron and Phosphorus in Silicon during High-Temperature Ion Implantation. G.V.Gadiyak: Fizika i Tekhnika Poluprovodnikov, 1997, 31[4], 385-9 (Semiconductors, 1997, 31[4], 321-5)