The time- and dose-dependences of B transient enhanced diffusion which was caused by Si self-implantation were simulated by taking account of the temporal evolution of self-interstitial clusters. The kinetics of cluster dissolution and growth were combined with the kick-out mechanism for B diffusion, and a decrease in cluster evolution rate with time was taken into account. By using a unified set of parameters, the simulation could explain some of the complex characteristics of transient enhanced diffusion. That is, the enhancement was independent of the implantation dose at short annealing times, but it increased with increasing implantation dose at longer annealing times.

Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implantation. M.Uematsu: Japanese Journal of Applied Physics - 2, 1997, 36[8A], L982-5