It was recalled that cavities which were formed by H implantation, and subsequent annealing, could provide strong sinks for metal interstitials and were ideal gettering sites for metal impurities. The effect of cavities upon the transient enhanced diffusion of B was studied here. The B implantation was carried out on wafers which contained pre-formed cavities, and the transient enhanced diffusion of B was suppressed during subsequent annealing. In some cases, the B was introduced into an amorphous layer, and the presence of cavities was again observed to reduce the degree of transient enhanced diffusion which occurred.

The Influence of Cavities and Point Defects on Boron Diffusion in Silicon. J.Wong-Leung, J.S.Williams, M.Petravić: Applied Physics Letters, 1998, 72[19], 2418-20