The segregation of B in an implanted As profile during annealing was investigated under various conditions. It was found that the implantation damage which was created by As implantation, and As deactivation, enhanced diffusion of the embedded B layer towards the shallow implanted As profile. The segregation phenomenon was observed in both 650C furnace-annealed and 1000C rapid thermally annealed samples. In the case of the former samples, the B segregation peak was located at the junction that was formed by implanted As, where residual dislocation loops were also observed at the original amorphous/crystalline interface. No amorphous/crystalline interface dislocation loops were found in rapid thermally annealed samples. Additional anomalous B segregation was observed in 1000C rapid thermally annealed and 750C furnace-annealed samples. The additional B segregation was not related to defect layers. It was therefore concluded that anomalous B segregation was caused by an electric field which resulted from the formation of a p-n junction.

Boron Segregation in As-Implanted Si Caused by Electric Field and Transient Enhanced Diffusion. R.D.Chang, P.S.Choi, D.L.Kwong, D.Wristers, P.K.Chu: Applied Physics Letters, 1998, 72[14], 1709-11