The diffusion of B from a doped oxide, during heating with a tungsten halogen lamp, was investigated at low temperatures. The diffusion coefficient for a 280nm-thick doped oxide at 760C, under these conditions, was equivalent to that at 900C under furnace annealing conditions; thus indicating the occurrence of enhanced diffusion in the former case. The enhanced diffusion was attributed to the presence of excess self-interstitials which were generated at the interface between the doped oxide and the Si sample during lamp heating. This would enhance the diffusion of impurities in Si, which diffused mainly via an interstitialcy mechanism.

Diffusion of Phosphorus and Boron into Silicon at Low Temperatures by Heating with Light Irradiation. Y.Ishikawa, M.Maruyama: Japanese Journal of Applied Physics - 1, 1997, 36[12A], 7433-6