The effect of stresses, introduced by Si3N4 films, upon B diffusion in float-zone material was studied, and the relationship between vacancy concentrations and compressive strain in the substrate was clarified. It was deduced that excess vacancies were generated by elastic compressive strain. This then led to retardation of the interstitial-mediated diffusion of B.

Boron Diffusion in Compressively Stressed Float Zone-Silicon Induced by Si3N4 Films. Y.Zaitsu, T.Shimizu, J.Takeuchi, S.Matsumoto: Journal of the Electrochemical Society, 1998, 145[1], 258-64