The B atoms in Si-doped superlattices were used to monitor native point defect behavior during annealing (790C, 0.25h), following 200keV Pb+ ion implantation to a dose of 1013/cm2 or 40keV Si+ implantation to a dose of 1013/cm2. These non-amorphizing implantations led to transient enhanced diffusion and clustering of the B-doping spikes. The enhancement in B diffusion exhibited a sub-linear dependence upon the mass of the implanted ion. Clustering of B occurred deeper and more extensively in Pb+-implanted samples, due to the greater mass of the ion. Measurements of the numbers of interstitials that were bound by extended defects, after rapid thermal annealing (800C, 10s), confirmed that the Pb+ implant had +4.5 of the implanted dose bound by extended defects; as compared to +0.6 after Si+ implantation, under the same anneal. Both of these results indicated that the +1 model was not valid for heavy-ion implantation.

Ion Mass Influence upon Transient Enhanced Diffusion and Boron Clustering in Silicon - Deviation from the “+1” Model. S.B.Herner, H.J.Gossmann, L.P.Pelaz, G.H.Gilmer, M.Jaraíz, D.C.Jacobson, D.J.Eaglesham: Journal of Applied Physics, 1998, 83[11], 6182-4