The oxidation-enhanced diffusion of B, and the diffusion/recombination of interstitials in Si-on-insulator materials, were studied in periodically B-doped samples. Bonded wafers, as well as O-implanted wafers, were used and the diffusion experiments were performed at 800 to 1050C. Parameters such as the recombination velocity and the diffusivity of interstitials were deduced. The results showed, for the first time, that oxidation-enhanced diffusion was effectively reduced, in Si-on-insulator material, in the near Si/SiO2 interface region as well as in the surface region. This effect decreased with increasing temperature.

Oxidation Enhanced Diffusion of Boron in Silicon-on-Insulator Substrates. S.Pindl, M.Biebl, E.Hammerl, H.Schäfer, H.Von Philipsborn: Journal of the Electrochemical Society, 1997, 144[11], 4022-6