In-diffusion from low-pressure chemical-vapor deposited borosilicate glass, during rapid thermal annealing, was studied. The effect, upon the doping characteristics, of a native oxide between the glass and the specimen was small. However, an unintentionally formed thin oxide between them caused a rapid change in the surface B concentration in the initial stages of diffusion. The diffusion of B was markedly enhanced by using high B-concentration borosilicate glass. This effect was inherent to the glass/Si structure, because enhanced diffusion was also observed during furnace annealing. The enhancement was more pronounced for rapid thermal annealing. It was concluded that the cause of the enhanced diffusion during rapid thermal annealing was not related to rapid heating but to the infra-red light heating.

Enhanced Diffusion of Boron in Si during Doping from Borosilicate Glass. M.Miyake: Journal of the Electrochemical Society, 1998, 145[7], 2534-7