The polyatomic cluster, decaborane (B10H14), was used to form very shallow p+ junctions. During annealing at 900C, the diffusion of 3keV B atoms was strongly suppressed as compared with that of 10keV-implanted B. The different annealing behaviors were attributed to the differing defect distributions which were produced by 10 and 3keV implantation.

Reduction of Boron Transient Enhanced Diffusion in Silicon by Low-Energy Cluster Ion Implantation. N.Shimada, T.Aoki, J.Matsuo, I.Yamada, K.Goto, T.Sugui: Materials Chemistry and Physics, 1998, 54[1-3], 80-3