Simulations were performed of post-implantation clustering and transient enhanced diffusion in B profiles with peak concentrations below the B solubility limit. An analytical formula for B clustering was derived and, by using this formula to establish the initial profiles, unified simulations could be performed which were based upon the self-interstitial cluster model and the B diffusion model. The simulations correctly predicted B clustering and transient enhanced diffusion for wide ranges of B concentration, implantation dose, energy, annealing time and temperature. The B profiles could be satisfactorily fitted not only to implanted B layers but also to initially active B layers. The simulated results exhibited the smaller enhancement by B, compared with P implantation, which was attributed to the trapping and faster diffusion of self-interstitials.

Simulation of Clustering and Transient Enhanced Diffusion of Boron in Silicon. M.Uematsu: Journal of Applied Physics, 1998, 84[9], 4781-7