The transient enhanced diffusion of B in the presence of dislocations which were produced by amorphizing implantation was simulated. This took account of the fact that end-of-range dislocations could act as both sink and source of self-interstitials; depending upon the temperature and annealing time. Transient enhanced diffusion profiles in re-grown regions and beneath end-of-range dislocations, produced by Si implantation at room temperature, were simulated. The results indicated that end-of-range dislocations did not act as perfect barriers to self-interstitial diffusion. The simulations accurately reproduced experimental profiles when account was taken of another type of defect that maintained the self-interstitial concentration at thermal equilibrium levels in the re-grown region.

Transient Enhanced Diffusion of Boron in the Presence of Dislocations Produced by Amorphizing Implantation in Silicon. M.Uematsu: Japanese Journal of Applied Physics - 1, 1998, 37[11], 5866-9