It was recalled that transient enhanced diffusion during the thermal annealing of ion-implanted B was well-established and was attributed to ion-induced excess interstitials. On the other hand, the mechanism of transient enhanced diffusion of B in pre-amorphized material was unclear. Enhanced B diffusion persisted in re-grown layers, even though the ion-induced interstitial defects which were responsible for transient enhanced diffusion in B+-implanted Si were eliminated during re-growth. In order to test the hypothesis that transient enhanced diffusion in pre-amorphized material resulted from so-called excess interstitial-type defects below the amorphous/crystalline interface, a buried pre-amorphized layer was recrystallized from the surface, inwards to the SiO2 interface of Si-on-insulator material, in order to eliminate all possible sources of excess interstitials.

Control of Diffusion of Implanted Boron in Pre-Amorphized Si. E.G.Roth, O.W.Holland, D.K.Thomas: Applied Physics Letters, 1999, 74[5], 679-81