It was shown to be possible to eliminate the enhancement, of B diffusion, due to an oxidizing surface or ion implantation damage. That is, a reduction in diffusion was achieved by the use of a low-temperature grown thin epitaxial SiGeC layer which completely filtered out the excess interstitials which were introduced by oxidation or implantation damage.

Complete Suppression of Boron Transient-Enhanced Diffusion and Oxidation-Enhanced Diffusion in Silicon using Localized Substitutional Carbon Incorporation. M.S.Carroll, C.L.Chang, J.C.Sturm, T.Büyüklimanli: Applied Physics Letters, 1998, 73[25], 3695-7