It was shown that the diffusion of B was strongly reduced in C-rich samples, even when no supersaturation of interstitials, due to implantation, was present. A markedly non-Fickian diffusion behavior was found for epitaxially grown-in C at concentrations well above the solid solubility. The experimentally observed suppression of B diffusion at high C concentrations was explained in terms of a model that predicted an undersaturation of Si self-interstitials; due to the diffusion of C out of C-rich regions.

Suppressed Diffusion of Boron and Carbon in Carbon-Rich Silicon. H.Rücker, B.Heinemann, W.Röpke, R.Kurps, D.Krüger, G.Lippert, H.J.Osten: Applied Physics Letters, 1998, 73[12], 1682-4