It was pointed out that mathematically self-consistent solutions to the equations for dopant diffusion and oxidation stacking faults, which treated self-interstitial and vacancy concentrations as unknowns, had not previously been obtained. In order to solve this problem, a new equation was derived here from the dopant diffusion equations. By simultaneously solving this equation, and the oxidation stacking-fault equation, a set of mathematically self-consistent solutions was obtained. The mechanisms of dopant diffusion and Si self-diffusion were investigated by using experimental results for dopant diffusion and oxidation stacking faults at 1373K. It was found that B diffusion depended upon the interstitialcy mechanism to the extent of about 35%.

Analysis of Dopant Diffusion in Si with Stacking Faults. T.Okino, T.Shimozaki: Materials Transactions, 1999, 40[6], 474-8