The amorphization of n-type Czochralski wafers was carried out by means of 30 or 120keV Si+ implantation to a dose of 1015/cm2. The implantation produced a 240nm-deep amorphous layer which was then implanted with 4keV B+ to a dose of 1014/cm2. Post-implantation annealing was carried out at 750C for times ranging from 0.25 to 6h. Secondary ion mass spectrometry was used to monitor dopant diffusion after annealing. Transmission electron microscopy was used to study the evolution of end-of-range defects. Upon annealing, the B peak revealed no clustering, and transient enhanced diffusion was observed over the entire B profile. The transmission electron microscopic results showed that both {311} defects and dislocation loops were present in the end-of-range damage region. Most of the {311} defects dissolved within 0.25 to 2h. The results indicated that {311} defects released interstitials during the period when B underwent transient enhanced diffusion. The results showed that there was a strong correlation between {311} dissolution in the end-of-range region, and transient enhanced diffusion in the re-grown layer. Quantitative transmission electron microscopy of dislocation loop growth and {311} dissolution indicated that, in addition to {311} defects, sub-microscopic sources of interstitials could also exist in the end-of-range and contribute to transient enhanced diffusion.

Correlation of End-of-Range Damage Evolution and Transient Enhanced Diffusion of Boron in Regrown Silicon. L.S.Robertson, M.E.Law, K.S.Jones, L.M.Rubin, J.Jackson, P.Chi, D.S.Simons: Applied Physics Letters, 1999, 75[24], 3844-6