The transient enhanced diffusion of B after amorphization by BF2 ion implantation was simulated on the basis of models for B diffusion, transient enhanced diffusion due to self-interstitial clusters, B clustering and B precipitation, and end-of-range defects. The simulation overestimated diffusion upon using typical values for the efficiency of end-of-range defects as a source of self-interstitials. The simulations reproduced experimental profiles quite well when the efficiency was reduced, so that the defects maintained self-interstitial concentrations at thermal equilibrium values. This reduction was attributed to the presence of F at end-of-range defect sites; which may have prevented the release of self-interstitials. A second peak near to the amorphous/crystalline interface, which was observed in experimental profiles, was reproduced and was attributed to B precipitates.

Simulation of Boron Diffusion in High-Dose BF2 Implanted Silicon. M.Uematsu: Japanese Journal of Applied Physics - 1, 2000, 39[4A], 1608-11