The effects of ion-implantation damage on B clustering and transient enhanced diffusion were studied by using polyatomic Bn-, where n was equal to 1, 2 or 3. The implantations all involved the same atomic B dose and energy. This Bn- series implantation could produce differing degrees of damage for a given as-implanted B profile and a given number of excess interstitials. The net effect of implantation damage could therefore be deduced. Secondary ion mass spectrometry measurements indicated that for 1keV B implantation and rapid thermal annealing (1050C, 10s), B1- implantation exhibited less transient enhanced diffusion and less B-interstitial clustering than did B2- and B3- implantation. A B trapping peak was also suggested to exist at the Si/SiO2 interface, since the amount of B which was trapped was related to the size of the implanted ions.

Implantation Damage Effect on Boron Annealing Behavior using Low-Energy Polyatomic Ion Implantation. J.Y.Jin, J.Liu, P.A.W.Van der Heide, W.K.Chu: Applied Physics Letters, 2000, 76[5], 574-6