The effect of laser thermal processing upon implantation-induced defect evolution and transient enhanced B diffusion was investigated. A 27nm-thick amorphous layer was formed by 10keV Si+ implantation, melted, and re-grown by using a 20ns ultra-violet laser pulse. Transmission electron microscopy revealed that recrystallization of the amorphous layer, following laser thermal processing, resulted in a high concentration of stacking faults and micro-twins in the re-grown region. The end-of-range loop evolution during subsequent 750C furnace annealing was different, in laser thermal processed samples, to that in control samples. Secondary ion mass spectroscopy of a B marker layer, 600nm below the surface, showed that laser thermal processing alone produced no enhanced diffusion. During further furnace annealing, the B layer in the laser thermally processed samples experienced just as much transient enhanced diffusion as control samples which were only implanted and furnace annealed. The results implied that laser melting and recrystallization of an implantation-induced amorphous layer did not measurably reduce the numbers of excess interstitials which were released from the end-of-range implantation damage.

Transient Enhanced Diffusion after Laser Thermal Processing of Ion Implanted Silicon. K.S.Jones, H.Banisaukas, J.Glassberg, E.Andideh, C.Jasper, A.Hoover, A.Agarwal, M.Rendon: Applied Physics Letters, 1999, 75[23], 3659-61