It was recalled that the diffusion of B involved a coupling with Si self-interstitials, and that an anomalous behavior of the latter was responsible for B transient enhanced diffusion. In particular, a large number of excess Si interstitials was created after implantation and part of this supersaturation precipitated into extended defects during annealing. A model for this phenomenon was presented here. A continuous description of the nucleation, growth and Ostwald ripening of dislocation loops was obtained. A comparison of the calculated sizes and densities of dislocation loops with experimental data confirmed the accuracy of the model. It was demonstrated that the concomitant evolution of Si free interstitials resulted in the right amount of B diffusion. Transient enhanced diffusion was correctly simulated throughout annealing.

Modelisation of Extended Defects to Simulate the Transient Enhanced Diffusion of Boron. E.Lampin, V.Senez, A.Claverie: Materials Science and Engineering B, 2000, 71[1-3], 155-9