The transient enhanced diffusion of high-concentration B during post-implantation annealing was simulated. The simulation was based upon models for B diffusion, for transient enhanced diffusion due to self-interstitial clusters and for B clustering. Account was taken of implantation-induced dislocations as a sink for self-interstitials, and of the solid solubility limit of B. Depth profiles were satisfactorily fitted for doses of 5 x.1014 to 5 x 1015/cm2, and for a wide range of conditions (800 to 1000C, 10s to 8h).

Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing. M.Uematsu: Japanese Journal of Applied Physics - 1, 1999, 38[6A], 3433-9