A model was presented for the transient enhanced diffusion of B which was implanted into pre-amorphized Si. The nucleation and growth of a supersaturation of Si interstitial atoms into dislocation loops was first described. The model for the nucleation and growth of dislocation loops was divided into: nucleation, pure growth and Ostwald ripening. The implementation of this model into a process simulator permitted the correct prediction of the size and density changes of dislocation loops, as observed using transmission electron microscopy, for various annealing times and temperatures. The simulation also described the associated behavior of the free Si interstitials which were responsible for transient enhanced diffusion. The implementation of this model into the simulator showed that transient enhanced diffusion in pre-amorphized Si could be simulated for various experimental conditions by assuming that B diffusion occurred via the coupling of B atoms to the rapidly changing supersaturation. It was shown that, although it did not greatly affect defect evolution itself, the value of the recombination velocity at the surface was a pivotal parameter in the correct estimation of the amount of transient enhanced diffusion after a given annealing treatment.

Modelling of the Transient Enhanced Diffusion of Boron Implanted into Preamorphized Silicon. E.Lampin, V.Senez, A.Claverie: Journal of Applied Physics, 1999, 85[12], 8137-44