The location of the defects which caused transient enhanced diffusion, of B that had been implanted using very low energies, were investigated. Localization was achieved by removing the surface layer of the B-implanted sample (1 and 0.5keV, 1014/cm2) using repeated native-oxide growth and removal. Subsequent annealing revealed the diffusion behavior. Previously discovered fast and ultra-fast transient enhanced diffusion processes were found to be generated by defects that were located at various depths. The defects which were responsible for the fast tail shift were found to be located closer to the surface than the defects which led to the ultra-fast tail shift.

Transient-Enhanced Diffusion of Boron Implanted at Ultra-Low Energies in Silicon - Localization of the Source. E.Schroer, V.Privitera, F.Priolo, E.Napolitani, A.Carnera: Applied Physics Letters, 2000, 76[21], 3058-60