It was recalled that the transient enhanced diffusion of B was strongly suppressed in C-rich material. It was shown that the mechanism which was responsible for this suppression was the out-diffusion of C from regions of high C concentration. Some B-doped superlattices, with background C concentrations of between 1018 and 1020/cm3, were grown by means of molecular beam epitaxy and were implanted with BF2 ions. The measured dependence of transient B diffusion upon the C profile was explained in terms of the coupled diffusion of C and Si point defects. This model was supported by observations of the transient enhanced diffusion of C.

The Impact of Supersaturated Carbon on Transient Enhanced Diffusion. H.Rücker, B.Heinemann, D.Bolze, R.Kurps, D.Krüger, G.Lippert, H.J.Osten: Applied Physics Letters, 1999, 74[22], 3377-9