The clustering and transient enhanced diffusion of B in superlattice structures was simulated. An analytical formula was derived for describing B clustering in terms of the reaction between B atoms and supersaturated self-interstitials. Transient enhanced diffusion profiles were satisfactorily fitted, not only in implantation-damaged regions but also deep in the bulk. It was also assumed that transient enhanced diffusion was reduced by C diffusion and self-interstitial trapping.

Clustering and Transient Enhanced Diffusion of B Doping Superlattices in Silicon. M.Uematsu: Japanese Journal of Applied Physics - 1, 1999, 38[8], 4718-9